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157332E APM9948 2SC1061C 12800 V159MEM1 KBPC5010 C5147 Q0270R
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  Datasheet File OCR Text:
 SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistor 2SC4852
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
Small ON resistance.
0.55
Low collector-to-emitter saturation voltage.
+0.1 1.3-0.1
Small output capacitance.
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 25 15 5 100 200 20 250 150 -55 to +150 Unit V V V mA mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage On resistance Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 15V, IE=0 VEB = 4V, IC=0 VCE = 2V , IC = 5mA VCE = 5V , IC = 10mA VCB = 10V , f = 1.0MHz 800 240 1.4 14 0.74 25 15 5 0.9 30 1.1 Min Typ Max 0.1 0.1 3200 MHz pF mV V V V V U Unit iA iA
VCE(sat) IC = 10mA , IB = 1mA VBE(sat) IC = 10mV , IB = 1mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 Ron IB = 3mA, f = 1.0MHz
Marking
Marking YT
+0.1 0.38-0.1
0-0.1
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